A new AlGaAs/GaAs/InAlGaP npn bulk-barrier optoelectronic switch

Author

Guo, Der-Feng

Author_Institution

Dept. of Electron. Eng., Chinese Air Force Acad., Kaohsiung, Taiwan

Volume

24

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

162

Lastpage

164

Abstract

Two-terminal switching performance is observed in a new AlGaAs/GaAs/InAlGaP optoelectronic device. The device shows that the switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage V/sub S/ and decreases the switching current I/sub S/, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160/spl deg/C. This high-temperature performance provides the studied device with potential high-temperature applications.

Keywords

III-V semiconductors; aluminium compounds; avalanche breakdown; gallium arsenide; gallium compounds; indium compounds; negative resistance; optoelectronic devices; semiconductor switches; 160 C; AlGaAs-GaAs-InAlGaP; NDR region; avalanche multiplication; carrier confinement; electrical input; high current state; low current state; n-p-n bulk-barrier optoelectronic switch; negative differential resistance; optical input; switching current; switching voltage; two-terminal switching performance; Carrier confinement; Etching; Gallium arsenide; High speed optical techniques; Lighting; Optical control; Optical switches; Optoelectronic devices; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.811399

Filename

1202514