Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

Author

Lee, Jeong-Soo ; Choi, Yang-Kyu ; Ha, Daewon ; Balasubramanian, Sriram ; King, Tsu-Jae ; Bokor, Jeffrey

Author_Institution

Dept. of Electr. Eng., Univ. of Texas, Richardson, TX, USA

Volume

24

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

186

Lastpage

188

Abstract

The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.

Keywords

CMOS integrated circuits; MOSFET; annealing; hydrogen; interface states; semiconductor device noise; silicon-on-insulator; sputter etching; surface topography; CMOS FinFETs; DC noise characteristics; RIE; SOI; Si; Si-SiO/sub 2/; Si-fin etch; drain current range; gate oxidation; high-quality surface; hydrogen annealing effect; low-frequency noise characteristics; oxide trap density; saturation current; surface roughness; threshold voltage; ultrathin body; Annealing; CMOS process; Etching; FinFETs; Hydrogen; Low-frequency noise; Oxidation; Rough surfaces; Surface roughness; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.809526

Filename

1202522