Transfer of on states between closely spaced negative-resistance p+-i-n+diodes

The possibility of making a shift register using an array of p+-i-n+diodes has been examined by investigating the transfer action of the on state of negative resistance characteristics between closely spaced p+-i-n+diodes. A gold-doped Si substrate is used to fabricate the p+-i-n+ structure. The possibility of the transfer of the on state has been examined. The main requirements for transferring are as follows: (a) The array of diodes must be located within about 500 ¿¿m in lateral length, (b) The operation time of the transfer action must be within about 10 ¿¿s. To clarify the transfer mechanism, experiments concerning the effect of carrier diffusion, Joule heat and recombination radiation due to on state current from one diode to the adjacent diode have been carried out. From the experimental results, it has been found that the transfer mechanism is dominated by carrier diffusion from the filamentary current path of one diode to the next.