• DocumentCode
    1213895
  • Title

    Some design aspects of m.o.s.l.s.i. operational amplifiers

  • Author

    Hoefflinger, Bernd ; Schumacher, Klaus ; Sibbert, Hans

  • Author_Institution
    Universit¿¿t Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
  • Volume
    3
  • Issue
    2
  • fYear
    1979
  • fDate
    3/1/1979 12:00:00 AM
  • Firstpage
    33
  • Lastpage
    40
  • Abstract
    An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.
  • Keywords
    circuit CAD; field effect integrated circuits; large scale integration; linear integrated circuits; operational amplifiers; Dortmund MOS amplifier; MOS LSI operational amplifier; bipolar transistor; computer aided design; n-channel enhancement depletion technology; weak inversion transistors;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1979.0010
  • Filename
    4807624