DocumentCode
1213895
Title
Some design aspects of m.o.s.l.s.i. operational amplifiers
Author
Hoefflinger, Bernd ; Schumacher, Klaus ; Sibbert, Hans
Author_Institution
Universit¿¿t Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
Volume
3
Issue
2
fYear
1979
fDate
3/1/1979 12:00:00 AM
Firstpage
33
Lastpage
40
Abstract
An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.
Keywords
circuit CAD; field effect integrated circuits; large scale integration; linear integrated circuits; operational amplifiers; Dortmund MOS amplifier; MOS LSI operational amplifier; bipolar transistor; computer aided design; n-channel enhancement depletion technology; weak inversion transistors;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1979.0010
Filename
4807624
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