• DocumentCode
    1214448
  • Title

    Single photon avalanche photodetector with integrated quenching fabricated in TSMC 0.18 μm 1.8 V CMOS process

  • Author

    Marwick, M.A. ; Andreou, A.G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
  • Volume
    44
  • Issue
    10
  • fYear
    2008
  • Firstpage
    643
  • Lastpage
    644
  • Abstract
    The design and testing of a single photon avalanche detector with integrated quenching circuit fabricated in the TSMC 0.18 mum CMOS technology are reported. A 78 mum device exhibits an average dark count rate of 100 counts/s without cooling. Photon detection probability of approximately 14% is measured at 670 nm.
  • Keywords
    CMOS integrated circuits; circuit testing; integrated circuit design; photodetectors; CMOS process; integrated quenching fabrication; single photon avalanche photodetector; size 0.18 mum; voltage 1.8 V; wavelength 670 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080673
  • Filename
    4515930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1214448