Hybrid triple-junction solar cells by surface activate bonding of III–V double-junction-cell heterostructures to ion-implantation-based Si cells

Author

Shigekawa, Naoteru ; Chai, Lu ; Morimoto, Masayuki ; Liang, Justin ; Onitsuka, Ryusuke ; Agui, Takaaki ; Juso, Hiroyuki ; Takamoto, Tatsuya

Author_Institution

Osaka City Univ., Osaka, Japan

fYear

2014

fDate

8-13 June 2014

Abstract

A hybrid triple-junction cell was fabricated by surface activated bonding of a lattice-matched invertedly-grown InGaP/GaAs double-junction cell to an ion-implantation-based Si bottom cell. An n⁺-doped layer on the top of bottom cell due to the ion implantation worked as its emitter and bonding layer for the tunnel junction. The bonding interface was found to be stable after the annealing at 400 °C. An efficiency of 24.4% was achieved at air mass 1.5G and one sun at room temperature.

Keywords

III-V semiconductors; annealing; gallium arsenide; gallium compounds; indium compounds; ion implantation; semiconductor doping; solar cells; III-V double-junction-cell heterostructures; InGaP-GaAs; Si bottom cell; air mass 1.5G; annealing; bonding interface; bonding layer; emitter layer; hybrid triple junction solar cells; ion-implantation-based Si cells; lattice-matched invertedly-grown InGaP-GaAs double-junction cell; n⁺-doped layer; surface activate bonding; surface activated bonding; temperature 293 K to 298 K; temperature 400 degC; tunnel junction; Annealing; Gallium arsenide; Lattices; Silicon; GaAs; InGaP; Si; bonding interface; multi-junction cell; surface activated bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6924976

Filename

6924976