DocumentCode
121478
Title
Bonded InGaAs cells for microsystems enabled photovoltaics
Author
Tauke-Pedretti, Anna ; Cederberg, Jeffrey G. ; Cruz-Campa, Jose Luis ; Alford, Charles ; Sanchez, Carlos A. ; Luna, Ian ; Nelson, Jeffrey S. ; Nielson, Gregory N.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2014
fDate
8-13 June 2014
Abstract
InGaAs solar cells bonded to a Si substrate are demonstrated. These cells are 160 μm to 1300 μm in diameter and designed for integration in microsystems enabled photovoltaic systems. When compared to devices fabricated on substrate no degradation of cell performance was observed due to bonding. Additionally, the short circuit current for the cells correlated well with simulations indicating a low loss optical path through the bonding interface.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; photovoltaic cells; short-circuit currents; solar cells; wafer bonding; bonded indium gallium arsenide solar cells; bonding interface; low loss optical path; microsystems enabled photovoltaic systems; short circuit current; Current measurement; Fabrication; Indium gallium arsenide; Indium phosphide; Silicon; Size measurement; Substrates; III–V solar cells; multi-junction solar cells; photovoltaic cells; wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6924979
Filename
6924979
Link To Document