• DocumentCode
    1215508
  • Title

    Characteristic and near field for a broad SiO2insulated d.h. laser: experiment and theory

  • Author

    Buus, J. ; Stubkjaer, K.

  • Author_Institution
    Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
  • Volume
    3
  • Issue
    6
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    210
  • Lastpage
    214
  • Abstract
    A detailed experimental investigation of a SiO2insulated GaAlAs laser is performed. The results are compared with theoretical calculations, including strain from the SiO2layer, and good agreement is found. The theory can account for a kink seen in the light/cunent characteristic.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor junction lasers; SiO2 insulated GaAlAs DH laser; light/current characteristic;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1979.0042
  • Filename
    4807795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1215508