Germanium pMOSFETs with Schottky-barrier germanide S/D, high-κ gate dielectric and metal gate

Author

Zhu, Shiyang ; Rui Li ; Lee, S.J. ; Li, Rui ; Du, Anyan ; Singh, Jagar ; Zhu, Chunxiang ; Chin, Albert ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

26

Issue

2

fYear

2005

Firstpage

81

Lastpage

83

Abstract

Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ∼5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.

Keywords

MOSFET; Schottky barriers; dielectric materials; germanium alloys; hafnium compounds; nickel alloys; platinum compounds; tantalum compounds; HfAlO; HfN-TaN; NiGe-Ge; NiGe-Ge contact; PtSi-Si contact; Schottky barrier; Schottky-barrier germanide source-drain; germanium pMOSFET; high-κ gate dielectric; metal gate; p-channel MOSFET; Dielectric substrates; Fabrication; Germanium; Laboratories; MOSFETs; Microelectronics; Schottky barriers; Silicon; Sputter etching; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.841462

Filename

1386401