Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

Author

Yun, Jang-Gn ; Oh, Soon-Young ; Huang, Bin-Feng ; Ji, Hee-Hwan ; Kim, Yong-Goo ; Park, Seong-Hyung ; Lee, Heui-Seung ; Kim, Dae-Byung ; Kim, Ui-Sik ; Cha, Han-Seob ; Hu, Sang-Bum ; Lee, Jeong-Gun ; Baek, Sung-Kweon ; Hwang, Hyun-Sang ; Lee, Hi-Deok

Author_Institution

Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea

Volume

26

Issue

2

fYear

2005

Firstpage

90

Lastpage

92

Abstract

In this letter, hydrogen plasma immersion ion implantation (H PIII) with Ni-Co-TiN tri-layer is introduced for the first time to enhance the thermal stability of the Ni-silicide for nanoscale CMOS technology. The Ni-silicided poly-Si gate and source/drain showed stable sheet resistance in spite of 650°C, 30 min post-silicidation annealing. The junction leakage current is even improved a lot without degradation of device performance using the proposed method.

Keywords

MOSFET; cobalt; nanoelectronics; nickel compounds; plasma immersion ion implantation; thermal stability; titanium compounds; 30 min; 650 C; Ni-Co-TiN; Ni-Co-TiN tri-layer; Ni-silicided poly-Si gate; NiSi; highly thermal robust NiSi; hydrogen plasma immersion ion implantation; junction leakage current; nanoscale CMOS technology; nanoscale MOSFET; post-silicidation annealing; sheet resistance; thermal stability; Annealing; CMOS technology; Hydrogen; Leakage current; MOSFETs; Plasma immersion ion implantation; Plasma stability; Robustness; Thermal degradation; Thermal stability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.841863

Filename

1386404