High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

Author

Maeda, Tatsuro ; Ikeda, Keiji ; Nakaharai, Shu ; Tezuka, Tsutomu ; Sugiyama, Naoharu ; Moriyama, Yoshihiko ; Takagi, Shinichi

Author_Institution

Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

Volume

26

Issue

2

fYear

2005

Firstpage

102

Lastpage

104

Abstract

We demonstrate, for the first time, successful operation of Schottky-barrier source/drain (S/D) germanium-on-insulator (GOI) MOSFETs, where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. Excellent performance of p-type MOSFETs using Pt germanide S/D is presented in the accumulation mode. The hole mobility enhancement of 50%∼40% against the universal hole mobility of Si MOSFETs is obtained for the accumulated GOI channel with the SiO₂-Ge interface.

Keywords

MOSFET; Schottky barriers; elemental semiconductors; germanium; hole mobility; silicon compounds; Pt germanide Schottky source/drain; Schottky-barrier source/drain; SiO₂-Ge; accumulated GOI channel; accumulation mode; bottom gate electrode; buried oxide; gate dielectric; high mobility Ge-on-insulator p-channel MOSFET; hole mobility enhancement; p-type MOSFET; silicon substrate; Ballistic transport; CMOS technology; Charge carrier processes; Dielectric substrates; Electrodes; Electron mobility; Fabrication; MOSFETs; Schottky barriers; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.841442

Filename

1386408