Charge-collection mechanisms of heterostructure FETs

Author

McMorrow, Dale ; Melinger, Joseph S. ; Thantu, Napoleon ; Campbell, Arthur B. ; Weatherford, Todd R. ; Knudson, Alvin R. ; Tran, Lan Hu ; Peczalski, Andrezej

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

41

Issue

6

fYear

1994

Firstpage

2055

Lastpage

2062

Abstract

Ion- and laser-induced charge-collection transients measured for AlGaAs-InGaAs hetero-insulated-gate field-effect transistors (HIGFETs) reveal evidence for two mechanisms of enhanced charge collection: a channel-modulation mechanism that dominates the charge-collection processes at positive gate biases and can persist for several nanoseconds; and a parasitic bipolar transistor mechanism that shows a sensitive dependence on the density of free carriers injected into the device, and is complete within a few hundred picoseconds. The results reinforce the utility of the laser technique for investigating the charge-collection mechanisms of semiconductor devices.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; ion beam effects; laser beam effects; AlGaAs-InGaAs; HIGFETs; channel-modulation mechanism; charge-collection mechanisms; field-effect transistors; hetero-insulated-gate FET; heterostructure FETs; injected free carriers density; ion-induced charge-collection transients; laser-induced charge-collection transients; parasitic bipolar transistor mechanism; positive gate biases; Bipolar transistors; Charge measurement; Current measurement; Density measurement; FETs; HEMTs; MODFETs; Nanoscale devices; Semiconductor devices; Semiconductor lasers;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340542

Filename

340542