• DocumentCode
    1215877
  • Title

    Ion-induced sustained high current condition in a bipolar device

  • Author

    Koga, R. ; Ferro, R.J. ; Mabry, D.J. ; Pinkerton, S.D. ; Romeo, D.E. ; Scarpulla, J.R. ; Tsubota, T.K. ; Shoga, M.

  • Author_Institution
    Aerosp. Corp., Los Angeles, CA, USA
  • Volume
    41
  • Issue
    6
  • fYear
    1994
  • Firstpage
    2172
  • Lastpage
    2178
  • Abstract
    Observation of an ion-induced sustained high current condition ("high current anomaly") in a bipolar device, that is similar but not identical to latchup, is reported. Both high current anomaly and single event upset test results are presented for the AD9048 test device. Photon emission microscopy was used to locate the site of the high current anomaly. A model of the triggering mechanism based on the results so obtained is described.<>
  • Keywords
    bipolar integrated circuits; integrated circuit modelling; ion beam effects; AD9048 test device; ADC; SEU test; bipolar IC; high current anomaly; ion-induced sustained high current condition; model; photon emission microscopy; single event upset test; triggering mechanism; Analog-digital conversion; Circuit testing; Clocks; Computer errors; Cyclotrons; Ion beams; Laboratories; Microscopy; Single event upset; Thyristor circuits;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.340559
  • Filename
    340559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1215877