DocumentCode
1215982
Title
SOI 68T020 heavy ions evaluation
Author
Lestrat, P. ; Terrier, C. ; Estreme, F. ; Rosier, L.H.
Author_Institution
Thomson-CSF Semicond. Specifiques, Saint-Egreve, France
Volume
41
Issue
6
fYear
1994
Firstpage
2240
Lastpage
2243
Abstract
THOMSON-CSF Semiconducteurs Specifiques (TCS) and the CEA-LETI have developed a 0.8 /spl mu/m SOI bulk compatible process (HSOI4CB) for space and battle field applications. The main motivation for this process is to allow the transfer of already existing bulk circuits onto SOI with reduced redesign effort and performances degradation. In this paper, SOI process (HSOI4CB) and the 68020 transfer are summarized, including the most significant characteristics of the resulting product (68T020), in terms of Single Event Upset (SEU) and Single Event Latch-up (SEL). For the same revision version, the 68T020 comparisons with bulk or epitaxial 68020 processes are given.<>
Keywords
integrated circuit testing; ion beam effects; silicon-on-insulator; 0.8 micron; 68020 transfer; 68T020; CEA-LETI; HSOI4CB; SEL; SEU; SOI bulk compatible process; Si; THOMSON-CSF; heavy ions evaluation; single event latchup; single event upset; CMOS technology; Cache memory; Circuits; Databases; Inverters; Microprocessors; Single event upset; Space technology; Standards development; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340569
Filename
340569
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