• DocumentCode
    1216496
  • Title

    Synthesis of Ultrafine Silicon Carbide Powders in Thermal Arc Plasmas

  • Author

    Kong, P. ; Huang, T.T. ; Pfender, E.

  • Volume
    14
  • Issue
    4
  • fYear
    1986
  • Firstpage
    357
  • Lastpage
    369
  • Abstract
    Ultrafine ß-SiC powders are synthesized in thermal plasmas by a reaction between methane and silicon monoxide. The reaction is carried out in an unconfined plasma jet (22.5 kW) operating at atmospheric Ar pressure. High temperatures (> 10 000 K) combined with ultrarapid quench rates (¿ 106 K/s) of the plasma lead to a high degree of supersaturation of the chemical vapor, resulting in homogeneous nucleation of ultrafine particles. Product characterizations are pursued with X-ray diffraction analysis, X-ray photoelectron spectroscopy (XPS), scanning, and transmission electron microscopy. The maximum SiC yield determined by thermogravimetric analysis (TGA) is 97.3 percent. Particle size analyses show a bimodal distribution with the majority of the particles falling in a size range from 2 to 40 nm. Triangular and hexagonal SiC particles are observed throughout this work and the nucleation and growth of these particles are discussed.
  • Keywords
    Argon; Chemicals; Electrons; Plasma chemistry; Plasma temperature; Plasma x-ray sources; Powders; Silicon carbide; Spectroscopy; X-ray diffraction;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.1986.4316563
  • Filename
    4316563