DocumentCode
1217591
Title
Equivalent circuit model for an insulated gate bipolar transistor
Author
Kao, C.H. ; Tseng, C.-C. ; Liang, Y.-C.
Author_Institution
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume
152
Issue
6
fYear
2005
Firstpage
1410
Lastpage
1416
Abstract
An equivalent-circuit model for an insulated gate bipolar transistor is developed. The model is based on a one-dimensional device simulation model. It also adopts a multi-MOS model so as to be able to include the doping variation in the MOS body. The model can be used for both circuit simulations and simple device simulations. The simulation results agree with experimental observations.
Keywords
circuit simulation; equivalent circuits; insulated gate bipolar transistors; semiconductor device models; IGBT; circuit simulation; doping variation; equivalent circuit model; insulated gate bipolar transistor; multi-MOS model; one-dimensional device simulation model;
fLanguage
English
Journal_Title
Electric Power Applications, IEE Proceedings -
Publisher
iet
ISSN
1350-2352
Type
jour
DOI
10.1049/ip-epa:20045151
Filename
1532693
Link To Document