Electro-optical characterization of n-CdS nanowires/p-CdTe heterojunction solar cell devices

Author

Hongmei Dang ; Singh, V.P. ; Guduru, Sai ; Bowie, John ; Cambron, Daniel

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Kentucky, Lexington, KY, USA

fYear

2014

fDate

8-13 June 2014

Firstpage

1601

Lastpage

1606

Abstract

Arrays of 100 nm long n-cadmium sulfide (CdS) nanowires were investigated as window layers for solar cells. These arrays exhibited enhanced transmission especially for wavelengths below 512 nm. Next, films of CdTe were deposited by CSS and the solar cell devices completed. I-V and C-V characteristics were measured in the temperature range of 100-300 °K. Analysis indicated that interface recombination and tunneling played dominant roles in electron transport across the heterojunction. The highest power conversion efficiency (PCE) nanowire cell to date had V_oc, J_sc, FF and PCE values of 766 mV, 25 mA/cm², 58% and 11.1% respectively.

Keywords

cadmium compounds; electro-optical devices; electro-optical effects; nanowires; solar cells; tunnelling; C-V characteristics; CSS; CdS-CdTe; FF values; I-V characteristics; PCE nanowire cell; electron transport; electrooptical characterization; heterojunction solar cell devices; interface recombination; power conversion efficiency; temperature 100 K to 300 K; tunneling; voltage 766 mV; window layers; Lighting; Nanowires; Photovoltaic cells; Radiative recombination; Temperature; Temperature measurement; Cadmium Sulfide Nanowires; CdS-CdTe; Heterojunction; Photovoltaic Cells; Schottky Diodes; Thin-Films;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925226

Filename

6925226