20.63 % nPERT cells and 20% PR gain bifacial module

Author

Shu-Hung Yu ; Chih-Jeng Huang ; Po-Tsung Hsieh ; Hung-Chih Chang ; Wei-Cheng Mo ; Zih-Wei Peng ; Chun-Wen Lai ; Chi-Chun Li

Author_Institution

Sci. Park Branch, Motech Ind., Inc., Tainan, Taiwan

fYear

2014

fDate

8-13 June 2014

Firstpage

2134

Lastpage

2137

Abstract

In this study, comprehensive efforts were conducted to improve conversion efficiency for n-type passivated emitter, rear totally-diffused (nPERT) cells. Key technologies such as boron emitter, phosphorous back surface field (BSF), KOH texturization, and metallization were all investigated and optimized. nPERT cells with 20.63% efficiency were successfully produced with processes based on homogeneous diffusion and screen-printed metallization. To our knowledge, this is the highest demonstrated efficiency for nPERT cells using boron diffusion. Additionally, we report outdoor performance of a bifacial module made with our nPERT cells, which indicates a performance ratio (PR) gain of more than 20% compared with a conventional p-type module.

Keywords

boron; phosphorus; solar cells; BSF; KOH texturization; PR gain bifacial module; boron diffusion; boron emitter; conversion efficiency improvement; efficiency 20.63 percent; homogeneous diffusion; n-type passivated emitter; nPERT cells; p-type module; performance ratio gain; phosphorous back surface field; rear totally-diffused cells; screen-printed metallization; solar cells; Charge carrier lifetime; Gain measurement; Metallization; Photovoltaic cells; KOH texturization; boron emitter; n-type PERT cells; phosphorous BSF; screen print;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925347

Filename

6925347