Effect of irradiation on gallium arsenide solar cells with multi quantum well structures

Author

Maximenko, S.I. ; Lumb, Matthew P. ; Hoheisel, Raymond ; Gonzalez, M. ; Scheiman, David A. ; Messenger, Scott R. ; Tibbits, Thomas N. D. ; Imaizumi, Masayuki ; Ohshima, T. ; Sato, Shin-ichiro ; Jenkins, Phillip P. ; Walters, R.J.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2014

fDate

8-13 June 2014

Firstpage

2144

Lastpage

2148

Abstract

In this paper, a complex analysis of the radiation response of GaAs solar cells with multi quantum wells (MQW) incorporated in the i-region of the device is presented. Electronic transport properties of the MQW i-region were assessed experimentally by the electron beam induced current (EBIC) technique. A 2-D EBIC diffusion model was applied to simulate EBIC line scans across device structure for different radiation doses. The results are interpreted using numerical modeling of the electrical field distribution at different radiation levels. Type conversion from n- to p-type was found in MQW i-region at displacement damage dose as low as low as ~9.88E9 MeV/g. This is supported by experimental and simulated EBIC and electric field distribution results.

Keywords

EBIC; III-V semiconductors; gallium arsenide; numerical analysis; quantum well devices; semiconductor quantum wells; solar cells; 2D EBIC diffusion model; EBIC line scan simulation; GaAs; MQW i-region; electrical field distribution; electron beam induced current technique; electronic transport property; irradiation effect; multiquantum well structure; numerical modeling; solar cell; Degradation; Electric fields; Numerical models; Photovoltaic cells; Protons; Quantum well devices; Radiation effects; C-V; EBIC; GaAs; Irradiation; Quantum Wells; SEM; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925349

Filename

6925349