MODFET noise model and properties with hot-electron effects

Author

Wang, G.W. ; Chen, Y.K. ; Kuang, J.B. ; Eastman, L.F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

36

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1847

Lastpage

1850

Abstract

A noise model to study hot-electron effects on noise properties is derived. This model gives H. Fukui´s (1979) coefficient an analytical expression in terms of bias condition and high-field parameters. 0.3-μm gate length pseudomorphic MODFETs with and without a high-energy barrier buffer are fabricated and characterized. The noise data analyzed by the noise model agree with microwave characteristics where carrier deconfinement of two-dimensional electrons degrades both the noise and high-frequency performance

Keywords

electron device noise; high electron mobility transistors; hot carriers; semiconductor device models; solid-state microwave devices; 0.3 micron; HEMT; MODFET; bias condition; carrier deconfinement; gate length; high-energy barrier buffer; high-field parameters; high-frequency performance; hot-electron effects; microwave characteristics; noise model; pseudomorphic device; solid state microwave device; two-dimensional electrons; Data analysis; Electrons; Fluctuations; Gain; HEMTs; MODFETs; Microelectronics; Noise figure; Performance analysis; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.34253

Filename

34253