• DocumentCode
    1221499
  • Title

    Intentionally inserted oxygen depleted (Ba0.5Sr0.5)TiO3 layers as a model of DC-electrical degradation

  • Author

    Hara, Toru

  • Author_Institution
    Taiyo Yuden Co. Ltd., Gunma, Japan
  • Volume
    4
  • Issue
    4
  • fYear
    2004
  • Firstpage
    670
  • Lastpage
    675
  • Abstract
    The relative dielectric constant versus voltage (εr-V) characteristics and the current density versus electric field (J-E) characteristics of (Ba0.5Sr0.5)TiO3 films, which have intentionally inserted oxygen depleted layers near the bottom electrodes, were investigated as a model of dc-electrical degradation phenomena. Our investigation demonstrated that the intentionally inserted oxygen depleted layer is the cause of the tunneling conduction.
  • Keywords
    barium compounds; current density; dielectric devices; dielectric polarisation; electric fields; permittivity; semiconductor thin films; titanium compounds; Ba0.5Sr0.5TiO3 layers; BaSrTiO3; current density; dc-electrical degradation; dielectric devices; dielectric polarization; electric field; electrodes; relative dielectric constant; tunneling conduction; voltage characteristics; Binary search trees; Capacitors; Degradation; Electrodes; Ordinary magnetoresistance; Oxygen; Strontium; Transistors; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2004.838421
  • Filename
    1388439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1221499