DocumentCode
1221562
Title
On proximity exposure compensation in electron-beam lithography
Author
Deshmukh, P.R. ; Khokle, W.S.
Author_Institution
Central Electron. Eng. Res. Inst., Pilani, India
Volume
36
Issue
9
fYear
1989
fDate
9/1/1989 12:00:00 AM
Firstpage
2011
Lastpage
2017
Abstract
The limit of proximity exposure compensation in electron-beam lithography by a dose-correlation technique is pointed out. It is shown that the electron energy dissipation (EED) distribution in the resist plays an important role in achieving this limiting condition. Simulation of resist profiles in isolated and closely spaced near-micrometer line patterns shows that the resist edge slope after proximity exposure compensation approaches a limiting slope set by the composite effect of the EED distribution, the beam size, the beam spacing, and the beam shape
Keywords
compensation; electron beam lithography; beam shape; beam size; beam spacing; dose-correlation technique; electron energy dissipation distribution; electron-beam lithography; limiting condition; near-micrometer line patterns; proximity exposure compensation; resist edge slope; resist profiles; Composite materials; Computational modeling; Electrons; Energy dissipation; Lithography; Monte Carlo methods; Resists; Scattering; Shape; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.34285
Filename
34285
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