Growth and characterization of GaAs/GaPAs metamorphic, epitaxial nanostructures

Author

Ahrenkiel, Phil ; Nan Zheng ; Street, Joseph

Author_Institution

South Dakota Sch. of Mines & Technol., Rapid City, SD, USA

fYear

2014

fDate

8-13 June 2014

Firstpage

2862

Lastpage

2864

Abstract

We discuss metamorphic, epitaxial nanostructures, using the III-V system GaAs/GaPAs as a particular example. The materials were synthesized by low-pressure metalorganic chemical vapor deposition, incorporating strain-engineered compositional grades. Vertically aligned, quantum-dot-array like structures were observed by cross-sectional transmission electron microscopy of short-period superlattice regions. Z-contrast images and geometric phase analysis of lattice images both confirm the presence of coherent GaAs dots within GaPAs barriers.

Keywords

chemical vapour deposition; gallium arsenide; nanostructured materials; quantum dots; solar cells; transmission electron microscopy; Z-contrast images; cross-sectional transmission electron microscopy; epitaxial nanostructures; geometric phase analysis; lattice images; low-pressure metalorganic chemical vapor deposition; metamorphic nanostructures; quantum-dot-array like structures; short-period superlattice regions; strain-engineered compositional grades; vertically aligned structures; Abstracts; Epitaxial growth; Epitaxial layers; Gallium arsenide; Green products; Indexes; epitaxial nanostructures; lattice mismatch; metamorphic growth; transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925528

Filename

6925528