DocumentCode
122222
Title
Controlling the defects of mc-Si ingot in industrial scale during crystallization
Author
Shi-Kai Tzeng ; Jui-Pin Wu ; Chen-Hao Yang ; Lung-Sheng Liao ; Kai-An Hao ; Jiang-Kang Chou ; Yu-Hao Wu ; Yu-Chung Chen ; Chun-Wen Lai
Author_Institution
Motech Ind., Inc., Tainan, Taiwan
fYear
2014
fDate
8-13 June 2014
Firstpage
3025
Lastpage
3027
Abstract
In this article, mc-Si ingots are grown in industrial scale with directional solidification method. The ingot quality can be controlled by tuning the solidification rates. The defect fraction of which evaluated by photoluminescence and lifetime images are used to estimate ingot quality. The results show that the defect can be suppressed significantly during crystallization, leading to the improvement of solar cell performance. Under identical solar cell fabrication process, the whole-ingot-input cell efficiency is increased from 17.68% to17.79%.
Keywords
crystal defects; crystallisation; elemental semiconductors; ingots; silicon; solar cells; Si; crystallization; defect fraction; directional solidification method; ingot quality; lifetime images; photoluminescence; solar cell fabrication process; solar cell performance; Abstracts; Pollution measurement; Production; Thickness measurement; ingot; mc-Si; solar cell; solidification;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6925571
Filename
6925571
Link To Document