Atmospheric pressure chemical vapor deposition of silicon thin films using cyclohexasilane

We report the deposition of silicon thin films at high rates using atmospheric pressure chemical vapor deposition (AP-CVD) with cyclohexasilane (CHS), a liquid-hydrosilane. A precursor solution of CHS in cyclooctane was aerosolized and subsequently vaporized prior to contacting with the substrate. Using CHS, Si thin films were obtained at temperatures as low as 300°C. A deposition rate of ~50 nm/s was observed at 500°C; while good-quality Si films were realized at 400°C. Structural analysis of the films indicates a combination of amorphous and nano-crystalline Si phases, withe 2-3 orders of photoconductivity.