• DocumentCode
    122323
  • Title

    ALD grown absorber materials for bulk heterojunction solar cells

  • Author

    Mahuli, Neha ; Sarkar, Subir Kumar

  • Author_Institution
    Dept. of Energy Sci. & Eng., Indian Inst. of Technol. Bombay, Powai, India
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Abstract
    In this report we have discussed the need of conformal deposition of the low bandgap materials as absorber in solid-state bulk heterojunction devices. We demonstrated ALD grown Sb2S3 and TiSx thin films for photovoltaic applications. The deposition mechanism was studied in depth using in-situ quartz crystal microbalance (QCM). Need of modified reactor configuration for the uniform deposition of the material throughout the depth of the mesoporous host was discussed with elaborated comparative results for various absorber material device configurations.
  • Keywords
    antimony compounds; atomic layer deposition; quartz crystal microbalances; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; solar cells; titanium compounds; ALD grown absorber materials; QCM; Sb2S3; TiSx; absorber material device configurations; bulk heterojunction solar cells; conformal deposition; deposition mechanism; depth; in-situ quartz crystal microbalance; low bandgap materials; modified reactor configuration; photovoltaic applications; solid-state bulk heterojunction devices; thin films; Atomic layer deposition; Heterojunctions; Materials; Metals; Photovoltaic cells; Photovoltaic systems; Antimony Sulfide; Atomic Layer Deposition (ALD); In-situ growth; Solid-state bulk heterojunction solar cells; Tin sulfide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925673
  • Filename
    6925673