Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

Author

Uraoka, Y. ; Hirai, N. ; Yano, H. ; Hatayama, T. ; Fuyuki, T.

Author_Institution

Mater. Sci. Dept., Nara Inst. of Sci. & Technol., Japan

Volume

24

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

236

Lastpage

238

Abstract

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.

Keywords

electron traps; elemental semiconductors; hot carriers; semiconductor device testing; silicon; thin film transistors; Si; dynamic stress; electron trap; hot carrier degradation; low-temperature polysilicon thin film transistor; picosecond time-resolved emission microscopy; pulse fall time; Circuit testing; Crystallization; Degradation; Driver circuits; Hot carriers; Microscopy; Pulse measurements; Stress; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.810877

Filename

1206849