DocumentCode
1224643
Title
A perspective from the 2003 ITRS: MOSFET scaling trends, challenges, and potential solutions
Author
Zeitzoff, Peter M. ; Chung, James E.
Volume
21
Issue
1
fYear
2005
Firstpage
4
Lastpage
15
Abstract
The IC industry has been rapidly and consistently scaling the design rules, increasing the chip and wafer size, and cleverly improving the design of devices and circuits for over 35 years. As a result, the industry has enjoyed exponential increases in chip speed and functional density versus time combined with exponential decreases in power dissipation and cost per function versus time, as projected by Moore´s Law by G.E. Moore (1995). As metal-oxide semiconductor field-effect transistors (MOSFETs) are scaled to deep submicron dimensions, the integrated circuit (IC) industry is running into increasing difficulties in continuing to scale at the accustomed rate, owing to the small dimensions and certain key device, material, and process limits that are being approached.
Keywords
MOSFET; integrated circuit design; IC industry; MOSFET; Moore Law; circuit improvement; device design improvement; integrated circuit; metal-oxide semiconductor field-effect transistors; Boron; Capacitance; Clocks; Dielectrics; Electrodes; Frequency; Leakage current; Logic devices; MOSFET circuits; Power dissipation;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/MCD.2005.1388764
Filename
1388764
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