• DocumentCode
    1224643
  • Title

    A perspective from the 2003 ITRS: MOSFET scaling trends, challenges, and potential solutions

  • Author

    Zeitzoff, Peter M. ; Chung, James E.

  • Volume
    21
  • Issue
    1
  • fYear
    2005
  • Firstpage
    4
  • Lastpage
    15
  • Abstract
    The IC industry has been rapidly and consistently scaling the design rules, increasing the chip and wafer size, and cleverly improving the design of devices and circuits for over 35 years. As a result, the industry has enjoyed exponential increases in chip speed and functional density versus time combined with exponential decreases in power dissipation and cost per function versus time, as projected by Moore´s Law by G.E. Moore (1995). As metal-oxide semiconductor field-effect transistors (MOSFETs) are scaled to deep submicron dimensions, the integrated circuit (IC) industry is running into increasing difficulties in continuing to scale at the accustomed rate, owing to the small dimensions and certain key device, material, and process limits that are being approached.
  • Keywords
    MOSFET; integrated circuit design; IC industry; MOSFET; Moore Law; circuit improvement; device design improvement; integrated circuit; metal-oxide semiconductor field-effect transistors; Boron; Capacitance; Clocks; Dielectrics; Electrodes; Frequency; Leakage current; Logic devices; MOSFET circuits; Power dissipation;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/MCD.2005.1388764
  • Filename
    1388764