Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Author

Dang, G.T. ; Mehandru, R. ; Luo, B. ; Ren, F. ; Hobson, W.S. ; Lopata, J. ; Tayahi, M. ; Chu, S.N.G. ; Pearton, S.J. ; Chang, W. ; Shen, H.

Author_Institution

Dept. of Chem. Eng., Univ. of Florida, Gainesville, FL, USA

Volume

21

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

1020

Lastpage

1031

Abstract

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2³¹-1 were achieved. The bit-error rates were below 10^-13. The threshold current is as low as 0.8 mA for 7-μm-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.

Keywords

III-V semiconductors; aluminium compounds; capacitance; error statistics; gallium arsenide; ion implantation; laser mirrors; laser transitions; ohmic contacts; quantum well lasers; surface emitting lasers; thermal analysis; 0.8 mA; 11.5 Gbit/s; 12 Gbit/s; 7 micron; 850 nm; AuBe-Pt-Au; GaAs-AlGaAs; GaAs/AlGaAs-based VCSEL; Pd-Ge-Pt-Au; SiO₂-TiO₂; VCSEL resistance; aperture definition; bit-error rates; current apertures; dielectric mirror formation; extrinsic capacitance reduction; eye diagram; fabrication; helium implantation; high-speed implant-confined index-guided lateral-current vertical cavity surface-emitting lasers; implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well VCSEL; n-ohmic contact formation; oxygen implantation; p-ohmic contact formation; process technology; pseudorandom bit sequence; slope efficiencies; small signal modulation bandwidths; thermal analysis; threshold current; Apertures; Dielectrics; Helium; Optical device fabrication; Oxygen; Quantum well lasers; Surface emitting lasers; Surface resistance; Thermal resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2003.810093

Filename

1207352