High-Performance and Low-Temperature-Compatible p-Channel Polycrystalline-Silicon TFTs Using Hafnium-Silicate Gate Dielectric

Author

Yang, Ming-Jui ; Chien, Chao-Hsin ; Lu, Yi-Hsien ; Luo, Guang-Li ; Chiu, Su-Ching ; Lou, Chun-Che ; Huang, Tiao-Yuan

Volume

28

Issue

10

fYear

2007

Firstpage

902

Lastpage

904

Abstract

In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium- silicate (HfSiO_x) gate dielectric are demonstrated with low- temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiO_x gate dielectric exhibit excellent device performance in terms of higher I_ON/I_OFF current ratio, lower subthreshold swing, and lower threshold voltage (V_th) albeit with slightly higher OFF-state current. More importantly, the mobility of TFTs with HfSiO_x gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO₂ gate dielectric.

Keywords

cryogenic electronics; thin film transistors; HfSiO - Interface; SiO₂ - Interface; hafnium-silicate gate dielectric; high-performance p-channel polycrystalline-silicon TFT; low-temperature-compatible p-channel polycrystalline-silicon TFT; subthreshold swing; threshold voltage; Amorphous silicon; Associate members; Chaos; Chemical vapor deposition; Dielectric substrates; Electrodes; Hafnium oxide; Laboratories; Leakage current; Thin film transistors; Hafnium silicate $(hbox{HfSiO}_{x})$; high dielectric constant (high-$kappa$); polycrystalline-silicon thin-film transistors (poly-Si TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.904901

Filename

4317681