DocumentCode
1225724
Title
Composition spread analysis of phase change dynamics in GexSbyTe1-x-y films embedded in an optical multilayer stack
Author
Laurenzis, M. ; Heinrici, A. ; Bolivar, P. Haring ; Kurz, H. ; Krysta, S. ; Schneider, J.M.
Author_Institution
Inst. fur Halbleitertechnik, Aachen, Germany
Volume
151
Issue
6
fYear
2004
Firstpage
394
Lastpage
397
Abstract
Composition spread analysis of ternary GexSbyTe1-x-y films embedded in an optical multilayer stack close to optical storage application is presented. GexSbyTe1-x-y films with two-dimensional graded composition were deposited in a combinatorial sputter process and analysed with electron-probe microanalysis. Detailed static tester analysis of the crystallisation dynamics are performed in a wide composition range around the pseudobinary line (GeTe - Sb2Te3). Both the as-deposited and the written amorphous phase show a fast crystallisation behaviour within 70-150 and 30-100 ns in a compositional range near the pseudobinary line, respectively. Interrelationship of composition and crystallisation time can directly be imaged from the presented analysis.
Keywords
amorphous state; antimony compounds; crystallisation; electron probe analysis; germanium compounds; optical multilayers; optical storage; solid-state phase transformations; sputter deposition; thin films; 30 to 100 ns; 70 to 150 ns; GexSbyTe1-x-y; GexSbyTe1-x-y films; amorphous phase; combinatorial sputter process; composition spread analysis; composition time; crystallisation dynamics; crystallisation time; electron probe microanalysis; optical multilayer stack; optical storage application; phase change dynamics; pseudobinary line; static tester analysis; two-dimensional graded composition; wide composition range;
fLanguage
English
Journal_Title
Science, Measurement and Technology, IEE Proceedings -
Publisher
iet
ISSN
1350-2344
Type
jour
DOI
10.1049/ip-smt:20041082
Filename
1389227
Link To Document