DocumentCode
1226288
Title
Silicon germanium programmable circuits for gigahertz applications
Author
Guo, J.-R. ; You, C. ; Chu, M. ; Curran, P.F. ; Diao, J. ; Goda, B. ; Jin, P. ; Kraft, R.P. ; McDonald, J.F.
Author_Institution
IBM, NY
Volume
1
Issue
1
fYear
2007
fDate
2/1/2007 12:00:00 AM
Firstpage
27
Lastpage
33
Abstract
Implementation of a silicon germanium (SiGe) field programmable gate array (FPGA) has been described. The reconfigurable basic cell (BC) that evolved from the Xilinx XC6200 has been redesigned to achieve high speed with lower power consumption. The propagation delay of the BC in comparison to the BC implemented in the earlier generation SiGe process has been reduced to 18% of its original value (from 240 to 42 ps) and the power consumption has been comparably reduced. The range of power reduction is from 13% of its original value when the BC is fully turned on down to 2% when the power saving scheme is applied. A 20times20 SiGe FPGA with physical dimensions of 4.5times4.8 mm has been fabricated using the IBM 120 GHz (7HP) process. To deliver a 10 GHz clock, an H tree has been designed and implemented with reduced skew. To demonstrate its performance, a 4:1 multiplexer (MUX) has been mapped for comparison with various CMOS FPGAs. The SiGe FPGA can achieve an 8 Gbps transmission rate, which is a 40 times improvement over the same implementation on a Xilinx Virtex CMOS FPGA. Other comparisons between the SiGe FPGA and commercial FPGAs have also been included. From simulations and measurements, the SiGe FPGAs have been shown to have high performance that can successfully tackle gigahertz applications
Keywords
CMOS integrated circuits; Ge-Si alloys; MMIC; clocks; current-mode logic; field programmable gate arrays; low-power electronics; trees (electrical); 10 GHz; 120 GHz; 4.5 mm; 4.8 mm; 8 Gbit/s; CMOS FPGA; H tree; SiGe; Xilinx XC6200; clock; field programmable gate arrays; gigahertz applications; multiplexer; power consumption; power saving scheme; propagation delay; reconfigurable basic cell; silicon germanium; skew;
fLanguage
English
Journal_Title
Circuits, Devices & Systems, IET
Publisher
iet
ISSN
1751-858X
Type
jour
DOI
10.1049/iet-cds:20050065
Filename
4123972
Link To Document