DocumentCode
1227427
Title
Structure dependence of second harmonic generation in asymmetric quantum-well structures
Author
Qu, Xiaohua H. ; Ruda, Harry
Author_Institution
Dept. of Metall. & Mater. Sci., Toronto Univ., Ont., Canada
Volume
31
Issue
2
fYear
1995
fDate
2/1/1995 12:00:00 AM
Firstpage
228
Lastpage
232
Abstract
Second harmonic generation in stepped asymmetric quantum wells (AQW) is discussed and shown to depend strongly on several controllable AQW parameters. The influence of inter-subband absorption is also investigated. It is demonstrated that with appropriate choice of semiconductor materials and precise bandgap engineering, optimized devices may be developed for a given input laser frequency
Keywords
energy gap; light absorption; optical harmonic generation; optimisation; semiconductor quantum wells; asymmetric quantum-well structures; controllable AQW parameters; input laser frequency; inter-subband absorption; optimized devices; precise bandgap engineering; second harmonic generation; semiconductor materials; stepped asymmetric quantum wells; structure dependence; Electromagnetic wave absorption; Frequency conversion; Optoelectronic devices; Photonic band gap; Quantum well lasers; Quantum wells; Resonance; Semiconductor lasers; Semiconductor materials; Surface emitting lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.348049
Filename
348049
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