An approach to distributed amplifier based on a design-oriented FET model

Author

Paoloni, Claudio ; D´Agostino, Stefano

Author_Institution

Dipartimento di Energia Elettrica, Rome Univ., Italy

Volume

43

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

272

Lastpage

277

Abstract

A Design-Oriented FET model in conjunction with an appropriate design procedure for distributed amplifiers is presented. The advantage of including the effects caused by FET parasitics in a newly defined simple unilateral FET circuit to be utilized in the conventional distributed amplifier design procedure allows an accurate prediction of the low-frequency gain and the 3-dB cutoff frequency. The simplicity of this formulation and a set of generalized design charts provide an interesting opportunity to designers. Comparisons among different experimental data from literature and the results obtained by this theory confirm the validity of the Design-Oriented FET model and the effectiveness of the given graphical design method

Keywords

MMIC amplifiers; distributed amplifiers; field effect MMIC; field effect analogue integrated circuits; integrated circuit design; semiconductor device models; FET parasitics; MMIC design; cutoff frequency; design-oriented FET model; distributed amplifier; graphical design method; low-frequency gain; unilateral FET circuit; Broadband amplifiers; Circuit analysis; Circuit topology; Cutoff frequency; Design methodology; Distributed amplifiers; Distributed parameter circuits; FET circuits; Helium; Transmission line theory;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.348084

Filename

348084