Electric field enhancement and power absorption in microwave TR-switches

Author

Semenov, V. ; Lisak, M. ; Anderson, D.

Author_Institution

Inst. of Appl. Phys., Acad. of Sci., Nizhny Novgorod, Russia

Volume

43

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

286

Lastpage

292

Abstract

An analytical and numerical investigation is made of electric field enhancement due to scattering of an incident plane wave by a biconical conductor. An application to microwave transmit-receive switches (TR) shows that field enhancement factors of the order of 20 to 40 are to be expected in the region close to the keep-alive contacts. An analysis of the microwave absorption by a small plasma sphere located in the vertex of the biconical conductor is also presented, showing that the plasma sphere absorbs a significant fraction of the incident power independently of the plasma size. This explains the observed absorption properties during the turn-on phase of TR switches

Keywords

electric breakdown; electric fields; electromagnetic wave absorption; electromagnetic wave scattering; microwave devices; switches; T/R switches; absorption properties; biconical conductor; electric field enhancement; incident plane wave scattering; microwave TR-switches; microwave absorption; microwave transmit-receive switches; plasma sphere; power absorption; turn-on phase; Conductors; Electric breakdown; Electromagnetic scattering; Electromagnetic wave absorption; Electromagnetic waveguides; Plasma applications; Plasma properties; Plasma sources; Plasma waves; Switches;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.348086

Filename

348086