DocumentCode
1227969
Title
A technique for minimizing intermodulation distortion of GaAs FET´s
Author
Koizumi, Haruhiko ; Nagata, Shunsuke ; Kanazawa, Kunihiko
Author_Institution
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Volume
43
Issue
2
fYear
1995
fDate
2/1/1995 12:00:00 AM
Firstpage
463
Lastpage
466
Abstract
This paper describes the theory to minimize the intermodulation distortion under a certain current bias condition for GaAs FET´s. A device-parametric study has been carried out to obtain the general equation that provides the lowest distortion condition as a function of the operating current. Based on the present theory, FET parameters have been designed practically
Keywords
III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; gallium arsenide; intermodulation distortion; microwave field effect transistors; FET parameters; GaAs; GaAs FET; IMD minimization; current bias condition; device-parametric study; intermodulation distortion; Anisotropic magnetoresistance; Antennas and propagation; FETs; Gallium arsenide; Intermodulation distortion; Microstrip antenna arrays; Microwave propagation; Microwave theory and techniques; Resonant frequency; Transmission line matrix methods;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.348111
Filename
348111
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