DocumentCode
1228505
Title
Compositionally graded emitter InGa(As)P/GaAs heterojunction bipolar transistors
Author
Ito, H. ; Nittono, T. ; Watanabe, N. ; Ishibashi, Takayuki
Author_Institution
NTT LSI Labs., Kanagawa
Volume
30
Issue
25
fYear
1994
fDate
12/8/1994 12:00:00 AM
Firstpage
2174
Lastpage
2175
Abstract
The first successful fabrication of compositionally graded emitter InGa(As)P/GaAs HBTs is reported. It is found that the influence of recombination current in the emitter depletion layer on current gain characteristics by compositional grading is small. The recombination current in the InGa(As)P emitter layer is less than 1/10 that in an AlGaAs emitter layer grown at a 100°C higher temperature
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; HBT; InGaAsP-GaAs; compositional grading; compositionally graded emitter; current gain characteristics; emitter depletion layer; fabrication; heterojunction bipolar transistors; recombination current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941449
Filename
350121
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