Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT

Author

Brannick, Alan ; Zakhleniuk, Nick A. ; Ridley, Brian K. ; Shealy, James R. ; Schaff, William J. ; Eastman, Lester F.

Author_Institution

Sch. of Comput. Sci. & Electron. Eng., Univ. of Essex, Colchester

Volume

30

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

436

Lastpage

438

Abstract

In this letter, a link between the AlGaN/GaN high-electron-mobility-transistor (HEMT) field plate (FP) and the rate of reoccupation of surface traps is presented. Surface traps are considered to be among the primary factors behind HEMT performance deterioration at high frequencies. Results from simulations using the commercial software package DESSIS are presented, in which the FP is found to reduce trap reoccupation by limiting the tunneling injection of electrons into surface traps in the gate-drain region and thus considerably improve the transient operation of the device.

Keywords

III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; transients; tunnelling; wide band gap semiconductors; AlGaN-GaN; DESSIS; HEMT field plate; high-electron-mobility-transistor; software package; surface trap; transient operation; tunneling injection; Current collapse; GaN; field plate (FP); high-electron-mobility transistor (HEMT); simulation; transient; traps;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2016680

Filename

4812046