• DocumentCode
    1229498
  • Title

    Total ionizing dose effects in MOS oxides and devices

  • Author

    Oldham, T.R. ; McLean, F.B.

  • Author_Institution
    NASA Goddard Space Flight Center/QSS Group, Greenbelt, MD, USA
  • Volume
    50
  • Issue
    3
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    483
  • Lastpage
    499
  • Abstract
    This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.
  • Keywords
    CMOS analogue integrated circuits; nuclear electronics; radiation effects; radiation monitoring; CMOS; MOS oxides; charge generation; circuit effects; detrapping; interface trap formation; radiation effects; total ionizing dose effects; transport; trapping; Aerospace electronics; Books; CMOS technology; Charge carrier processes; Circuits; Electron traps; Ionizing radiation; NASA; Space technology; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.812927
  • Filename
    1208572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1229498