DocumentCode
1229645
Title
Historical perspective on radiation effects in III-V devices
Author
Weatherford, Todd R. ; Anderson, Wallace T., Jr.
Author_Institution
Naval Postgraduate Sch., Monterey, CA, USA
Volume
50
Issue
3
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
704
Lastpage
710
Abstract
A historical review of radiation effects on III-V semiconductor devices is presented. The discussion ranges from examining early material and device studies to present-day understanding of III-V radiation effects. The purpose of this paper is to provide present researchers with a summary of discoveries and lessons learned from previous failures and successes.
Keywords
III-V semiconductors; gallium arsenide; nuclear electronics; radiation effects; semiconductor devices; GaAs; III-V devices; compound semiconductor; gallium arsenide; radiation effects; semiconductor devices; FETs; Gallium arsenide; III-V semiconductor materials; Ionization; Neutrons; Radiation effects; Semiconductor devices; Silicon; Substrates; Weapons;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.813124
Filename
1208585
Link To Document