Explanation for the AC–DC Voltage Transfer Differences in Thin-Film Multijunction Thermal Converters on Silicon Chips at High Frequencies

Author

Scarioni, Luciana ; Klonz, Manfred ; Kessler, E.

Author_Institution

Departamento de Fisica, Univ. de Carabobo, Valencia

Volume

56

Issue

2

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

567

Lastpage

570

Abstract

In this paper, an explanation for the ac-dc voltage transfer differences at frequencies greater than 100 kHz of the standard thin-film or planar multijunction thermal converter (PMJTC) developed at the Physikalisch-Technische Bundesanstalt and fabricated on a silicon chip has been found. The simulation indicates that the capacitance of the bond pads of the heater is the reason for an increase of the ac-dc voltage transfer difference of PMJTCs with higher heater resistance to negative values. Bond pads of smaller size and larger distance are shown to improve the frequency response

Keywords

AC-DC power convertors; electric current measurement; measurement standards; thin film devices; voltage measurement; 100 kHz; AC-DC voltage transfer differences; Physikalisch-Technische Bundesanstalt; ac-dc voltage transfer difference; bond pads; planar multijunction thermal converter; silicon chips; standard thin-film; thin-film multijunction thermal converters; Analog-digital conversion; Bonding; Capacitance; Frequency conversion; Heat transfer; Resistance heating; Semiconductor thin films; Silicon; Standards development; Voltage; AC–DC voltage transfer; bond pads; high frequency; silicon chip;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2007.890798

Filename

4126909