DocumentCode
1231116
Title
Polarisation-dependent optical gain in ridge-waveguide laser diodes
Author
Stegmuller, B. ; Amann, M.-C.
Author_Institution
Siemens AG Res. Labs., Munich, West Germany
Volume
25
Issue
16
fYear
1989
Firstpage
1017
Lastpage
1018
Abstract
The polarisation dependence of the optical gain in quasi-index-guided, lambda =1.3 mu m, GaInAsP-InP, metal-clad, ridge-waveguide laser diodes is demonstrated. It is shown experimentally that, depending on the lateral waveguiding, either the TE or the TM-polarised mode is favoured. By appropriate design of the laser structure, almost polarisation-independent internal optical gain has been experimentally achieved.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; light polarisation; optical communication equipment; optical waveguides; semiconductor junction lasers; 1.3 micron; GaInAsP-InP; III-V semiconductors; TE polarised mode; TM-polarised mode; lateral waveguiding; metal-clad; optical communications light source; optical gain; polarisation dependence; polarisation-independent internal optical gain; quasi-index-guided; quasiindex guided structure; ridge-waveguide laser diodes; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890680
Filename
35077
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