• DocumentCode
    1231491
  • Title

    Photon-counting receiver in near-infra-red region: use of GaInAs avalanche photodiode

  • Author

    Kikuchi, Kazuro ; Yamada, Makoto

  • Author_Institution
    Dept. of Electron. Eng., Tokyo Univ., Japan
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1028
  • Lastpage
    1029
  • Abstract
    A photon-counting receiver using a GaInAs avalanche photodiode has been constructed. The receiver has a quantum efficiency greater than 1% in the spectral range from 800 to 1600 nm, where no practical photomultipliers are available. The real-time recording of single photon incidence is also achieved with 20 ns time resolution.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; photodetectors; photon counting; 1 percent; 20 ns; 800 to 1600 nm; APD; GaInAs; III-V semiconductors; avalanche photodiode; nanosecond time-resolution; near IR-region; near infrared; near-infra-red region; photon-counting receiver; quantum efficiency; real-time recording; single photon incidence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890687
  • Filename
    35084