Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT technology

Author

Ishii, K. ; Nakajima, H. ; Nosaka, H. ; Ida, M. ; Kurishima, K. ; Yamahata, S. ; Enoki, T. ; Shibata, T.

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi, Japan

Volume

39

Issue

12

fYear

2003

fDate

6/12/2003 12:00:00 AM

Firstpage

911

Lastpage

913

Abstract

A low-power 16:1 multiplexer (MUX) IC using undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been successfully designed and fabricated. To minimise power consumption, the collector current density of each HBT was optimised taking into account the required operating speed and the number of fan-outs. Up to 47 Gbit/s error-free operation was confirmed with low power consumption of about 3.2 W. These results demonstrate that InP/InGaAs HBT technology is attractive for fabricating over 40 Gbit/s, low-power medium-scale-integration (MSI) circuits.

Keywords

III-V semiconductors; bipolar digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; multiplexing equipment; 3.2 W; 40 Gbit/s; InP-InGaAs; InP/InGaAs HBT technology; MSI circuits; collector current density optimisation; heterojunction bipolar transistors; low-power multiplexer; medium-scale-integration circuits; multiplexer IC;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030596

Filename

1209489