DocumentCode
1231750
Title
Mid-infrared ring laser
Author
Krier, A. ; Sherstnev, V.V. ; Wright, D. ; Monakhov, A.M. ; Hill, G.
Author_Institution
Phys. Dept., Lancaster Univ., UK
Volume
39
Issue
12
fYear
2003
fDate
6/12/2003 12:00:00 AM
Firstpage
916
Lastpage
917
Abstract
The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 μm and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.
Keywords
laser cavity resonators; ring lasers; semiconductor lasers; 125 K; 3 micron; InAs; large band offsets; mid-IR laser diode; mid-infrared ring LD; mid-infrared spectral region; ring resonator lasers; semiconductor lasers; symmetrical double heterostructure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030598
Filename
1209492
Link To Document