2-19-GHz low-DC power and high-IP/sub 3/ monolithic HBT matrix amplifier

Author

Chang, K.W. ; Nelson, B.L. ; Oki, A.K. ; Umemoto, D.K.

Author_Institution

TRW, Redondo Beach, CA, USA

Volume

2

Issue

1

fYear

1992

Firstpage

17

Lastpage

18

Abstract

The design and performance of the first wideband, low-DC power and high-IP/sub 3/ monolithic matrix amplifier using GaAs-AlGaAs heterojunction bipolar transistors (HBTs) is reported. The amplifier uses four 2*10 mu m/sup 2/ quad-emitter HBTs in a 2*2 matrix configuration and has a measured gain of 9.6+or-0.9 dB over the 2-19-GHz frequency band. Measured output IP/sub 3/ and 1-dB compression point are 26 dBm and 13 dBm, respectively, at 18 GHz. The total DC-power dissipation is less than 200 mW. The input and output return losses are better than -9.5 dB within the 2-16-GHz bandwidth.<>

Keywords

MMIC; bipolar integrated circuits; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers; -9.5 dB; 1-dB compression point; 14 GHz; 17 GHz; 2 to 19 GHz; 200 mW; 9.6 dB; DC-power dissipation; GaAs-AlGaAs; SHF; broadband type; heterojunction bipolar transistors; monolithic HBT matrix amplifier; output IP/sub 3/; quad-emitter HBTs; return losses; wideband; Bandwidth; Capacitance; Capacitors; Coupling circuits; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; High power amplifiers; Space technology; Transmission line matrix methods;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.109129

Filename

109129