• DocumentCode
    1231825
  • Title

    Epitaxial growth of metallic ErP, ErSb and lattice-matched ErPxSb(1-x) layers on

  • Author

    Guivarc´h, A. ; Caulet, J. ; Le Corre, A.

  • Author_Institution
    LAB/OCM, CNET., Lannion, France
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1050
  • Lastpage
    1052
  • Abstract
    ErP and ErSb compounds have been demonstrated to have metallic behaviour ( rho ErP=150 mu Omega cm; rho ErSb=60 mu Omega cm). The authors show that they can be epitaxially grown on InP and GaAs in an MBE system and that many matched systems (metallic layer)/(III-V semiconductor) can be built using ternary compounds of rare-earth and V elements.
  • Keywords
    erbium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor-metal boundaries; GaAs-ErAs; GaAs-ErP; GaAs-ErSb; III-V semiconductors; InP-ErAs; InP-ErP; InP-ErP xSb 1-x; MBE system; epitaxially grown; matched systems; metallic behaviour; semiconductor-metal boundaries; ternary compounds;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890702
  • Filename
    35099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1231825