• DocumentCode
    1231881
  • Title

    Charge-sensitive preamplifier for integration on silicon radiation detectors: first experimental results

  • Author

    Rehak, P. ; Rescia, S. ; Radeka, Veljko ; Gatti, Emilio ; Longoni, A. ; Sampietro, Marco ; Bertuccio, G. ; Kemmer, J. ; Prechtel, V.

  • Author_Institution
    Brookhaven Nat. Lab., Upton, NY, USA
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1057
  • Lastpage
    1058
  • Abstract
    The first implementation of a charge-sensitive preamplifier integrated on a fully depleted, high-resistivity silicon wafer and first results about its performance are reported. The preamplifier is based on a new type of implanted n-channel JFET, and it is implemented by the same process as for fully depleted silicon radiation detectors.
  • Keywords
    elemental semiconductors; junction gate field effect transistors; preamplifiers; semiconductor counters; silicon; Si; charge-sensitive preamplifier; fully-depleted wafer; implanted n-channel JFET; radiation detectors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890706
  • Filename
    35103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1231881