Physical equivalent circuit model for planar Schottky varactor diode

Author

Phillippe, P. ; El-Kamali, Walid ; Pauker, Vlad

Author_Institution

Lab. d´´Electron. et de Phys. Appl., Limeil-Brevannes, France

Volume

36

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

250

Lastpage

255

Abstract

A physical equivalent circuit model for the planar GaAs Schottky varactor diode is presented. The model takes into account the distributed resistance and capacitance of the active layer, the sidewall capacitance, and the parasitic resistances and accurately accounts for the high series resistance observed near the pinch-off voltage. The dependence of the maximum series resistance on varactor size, frequency, and doping profile has been theoretically investigated, and the results agree well with experimental data. The proposed model can be easily used for optimization of planar Schottky varactor diodes with regard to broadband monolithic VCO constraints

Keywords

III-V semiconductors; Schottky-barrier diodes; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; varactors; GaAs; III-V semiconductors; active layer; broadband monolithic VCO constraints; distributed resistance; doping profile; frequency; maximum series resistance; microwave devices; parasitic resistances; physical equivalent circuit model; planar Schottky varactor diode; sidewall capacitance; varactor size; Constraint optimization; Doping profiles; Equivalent circuits; Frequency; Gallium arsenide; Parasitic capacitance; Schottky diodes; Semiconductor process modeling; Varactors; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3512

Filename

3512