• DocumentCode
    1232230
  • Title

    20 ps MESFET sampling gate

  • Author

    Hafdallah, H. ; Vernet, G. ; Ouslimani, A. ; Adde, R.

  • Author_Institution
    Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
  • Volume
    25
  • Issue
    22
  • fYear
    1989
  • Firstpage
    1471
  • Lastpage
    1473
  • Abstract
    A high-speed GaAs MESFET sequential sampling gate employing a NEC710 as a resistive switch is designed and the step response is tested. The 10-90% transition duration of the intrinsic step response is 20 ps. Experimental results are analysed using time-domain simulation of the circuit, including propagation effects and measurement equipment responses.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; sample and hold circuits; switching circuits; 20 ps; GaAs; MESFET; intrinsic step response; measurement equipment responses; propagation effects; resistive switch; sequential sampling gate; step response; time-domain simulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890987
  • Filename
    35140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232230